Calculator Inputs
Example Data Table
| Material | Flux (atoms/cm²·s) | Density (g/cm³) | Molar Mass (g/mol) | Sticking | Efficiency (%) | Rate (nm/min) |
|---|---|---|---|---|---|---|
| GaAs | 6.50E+14 | 5.32 | 144.64 | 0.92 | 96 | 5.0418 |
| Si | 9.20E+14 | 2.33 | 28.09 | 0.88 | 93 | 5.5197 |
| AlN | 4.80E+14 | 3.26 | 40.99 | 0.85 | 90 | 2.7859 |
Formula Used
Net incorporated flux = species flux × sticking coefficient × utilization efficiency.
Growth rate in cm/s = (net flux × molar mass) ÷ (density × Avogadro constant × atoms per deposited unit).
Growth rate in nm/min = growth rate in cm/s × 107 × 60.
Growth time = target thickness ÷ growth rate.
Monolayer rate = growth rate in nm/s ÷ monolayer thickness.
These equations translate incoming atomic flux into film thickness using material density, molecular weight, and actual incorporation efficiency.
How to Use This Calculator
- Select the calculation mode that matches your process question.
- Enter material density, molar mass, sticking coefficient, and efficiency.
- Provide flux data for predictive modes or measured thickness and time for back-calculation.
- Set monolayer thickness to estimate layer-by-layer growth speed.
- Enter wafer area if you want total deposited mass on the wafer.
- Press the calculate button and review the result panel above the form.
- Use the CSV or PDF buttons to save the calculated summary.
Why Engineers Use Epitaxy Growth Rate Estimates
Epitaxy growth planning depends on more than one simple rate figure. Engineers often need to connect source flux, sticking behavior, material density, stoichiometry, and target thickness in a single working estimate. This calculator helps combine those factors into a practical process view for wafer growth planning.
In flux-based work, small changes in source delivery or surface incorporation can significantly change the resulting film thickness. A single estimate in nm/min may not be enough, so this page also shows µm/hr, nm/s, monolayers per second, deposited mass, and required source flux. Those extra outputs help compare recipes, tool capability, and throughput.
The target-time mode is useful during process planning. When a project calls for a fixed epitaxial thickness, engineers can estimate required run duration directly from material properties and effective flux. The measured mode helps with validation. If a real run produced a known thickness in a known time, the page back-calculates effective rate and related deposition metrics for review.
These calculations do not replace full reactor modeling. Temperature gradients, gas-phase chemistry, parasitic reactions, chamber pressure, surface reconstruction, and dopant behavior all matter in real systems. Still, a structured first-pass growth estimate is extremely valuable for recipe screening, documentation, and quick engineering communication.
Frequently Asked Questions
1. What does this calculator estimate?
It estimates epitaxial film growth rate, expected thickness, run time, monolayer speed, and deposition mass from flux, material properties, and incorporation assumptions.
2. When should I use flux-based mode?
Use flux-based mode when you know the incoming species flux and want to predict growth rate and produced thickness for a chosen run duration.
3. Why is sticking coefficient important?
Not every arriving atom incorporates into the lattice. The sticking coefficient adjusts source flux to better reflect actual surface capture during growth.
4. What does atoms per deposited unit mean?
It represents the number of atoms associated with one deposited formula unit. For compound films, this helps align mass-based growth with atomic arrival rates.
5. Can I use this for MBE and CVD processes?
Yes. It is suitable for first-pass estimates in several epitaxial processes, provided your input flux and efficiency assumptions reflect the actual reactor conditions.
6. Are the exported files based on visible results?
Yes. The CSV and PDF downloads use the current calculated result panel, making them convenient for design notes, handoffs, or recipe comparisons.
7. Does this replace metrology or reactor simulation?
No. It supports screening and engineering communication, but real process qualification still needs measured thickness, uniformity, composition, and tool-specific validation.