Analyze high-k layers and oxide scaling clearly. Review formulas, examples, and downloadable reports here easily. Built for engineers needing fast semiconductor dielectric checks today.
| Material | High-k Thickness (nm) | k | Interfacial SiO2 (nm) | Total EOT (nm) |
|---|---|---|---|---|
| HfO2 | 2.50 | 20.0 | 0.50 | 0.9875 |
| Al2O3 | 3.00 | 9.0 | 0.40 | 1.7000 |
| ZrO2 | 2.20 | 25.0 | 0.60 | 0.9432 |
The calculator uses the electrical thickness relationship for a high-k layer and then adds any interfacial silicon dioxide layer.
High-k EOT Contribution: EOThigh-k = thigh-k × (3.9 / khigh-k)
Total EOT: EOTtotal = tinterfacial SiO2 + EOThigh-k
Capacitance Density: C/A = ε0 × 3.9 / EOT
Here, thickness is converted to nanometers internally. The dielectric constant of silicon dioxide is taken as 3.9. Capacitance density is reported in µF/cm². Total capacitance uses the gate area that you enter.
Equivalent oxide thickness, or EOT, is a key semiconductor metric. It converts a high-k gate dielectric into an equivalent silicon dioxide thickness. Engineers use it to compare electrical performance across materials. A lower EOT usually supports stronger gate control. It can also improve channel modulation in scaled devices.
Modern transistors cannot rely only on extremely thin silicon dioxide. Direct oxide scaling raises tunneling leakage and reliability concerns. High-k materials solve part of that problem. They allow a physically thicker layer while keeping similar capacitance. EOT expresses that benefit in a familiar oxide value. This makes design reviews, process comparisons, and compact modeling easier.
This calculator estimates the EOT contribution of a high-k film and adds any interfacial silicon dioxide layer. It also calculates capacitance density and optional total capacitance from gate area. Engineers can test dielectric constants, thickness choices, and target EOT goals in one place. Export tools make reporting faster for lab notes, qualification work, and process optimization.
You may use this page during MOS capacitor studies, gate stack screening, CMOS process integration, or device simulation setup. It is useful when comparing hafnium oxide, aluminum oxide, zirconium oxide, or custom dielectric stacks. The example table below shows how thickness and dielectric constant shift the final EOT. That helps teams balance leakage, electrostatics, manufacturability, and reliability.
EOT is an electrical equivalence, not a full process guarantee. Real devices also depend on interface quality, fixed charge, mobility degradation, roughness, and thermal budget. If an interfacial layer grows during anneal, total EOT can rise even when the high-k film remains unchanged. Use measured capacitance and metrology data whenever available. That produces stronger engineering decisions.
Keep units consistent before comparing wafers, lots, or simulation corners. A small input mistake can shift capacitance density significantly. Review dielectric constant assumptions from trusted material data. Then compare the calculated EOT with measured CV results. When the model and silicon align, stack planning becomes faster. That supports tighter technology development, cleaner documentation, and better communication between process, device, and reliability groups today.
Equivalent oxide thickness is the silicon dioxide thickness that would deliver the same capacitance effect as the selected high-k dielectric layer in a gate stack.
A lower EOT usually improves gate control over the channel. That supports stronger electrostatics in scaled transistors, although leakage and reliability still require careful review.
No. Physical thickness is the real film thickness. EOT is an electrical comparison value. High-k films can be physically thicker while still showing a much smaller EOT.
Many real gate stacks include an interfacial silicon dioxide layer. Even a thin interface can add meaningful EOT, so excluding it can understate the total electrical thickness.
Enter the effective dielectric constant for your deposited film or modeled material. Use values from measured process data, literature, or characterization reports for better accuracy.
Capacitance density is capacitance per unit area. It helps compare dielectric stacks without needing a specific device size and is reported here in µF/cm².
Yes. The calculator accepts nanometers or angstroms for thickness values. It converts everything internally before calculating EOT, capacitance density, and target thickness.
No. It is a fast engineering estimate. Final signoff should also include measured CV data, leakage results, interface analysis, thermal effects, and device reliability checks.