Turn absorption edges into band gaps in seconds. Compare wavelength, frequency, and Varshni temperature curves. Save tables as CSV or PDF, then share easily.
| Time | Method | Inputs | Eg (eV) | λ (nm) | f (THz) | Note |
|---|---|---|---|---|---|---|
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| Material | Absorption edge λ (nm) | Estimated Eg (eV) | Notes |
|---|---|---|---|
| Silicon (Si) | 1107 | 1.120 | Near room temperature, indirect gap. |
| Germanium (Ge) | 1870 | 0.663 | Indirect gap, strong temperature dependence. |
| GaAs | 817 | 1.518 | Direct gap, efficient optoelectronics. |
| GaN | 365 | 3.397 | Wide band gap, UV/blue devices. |
It is the energy difference between the valence band and conduction band. Photons below the gap usually cannot create free carriers in an ideal semiconductor.
At the absorption edge, photon energy roughly matches the electronic transition threshold. Using E = hc/λ gives Eg in electron‑volts after unit conversion.
Use it when you know the material constants and temperature. It helps estimate how Eg shifts with temperature for many common semiconductors.
They are typical reference values. Thin films, strain, alloying, and heavy doping can change Eg and temperature behavior, so measured data should be preferred.
It is the photon frequency that has the same energy as the computed band gap. It is useful when you work with spectroscopy or THz/IR sources.
Datasheets may specify direct vs indirect gaps, different temperatures, or alloy compositions. Measurement methods also differ, so ensure you compare the same conditions.
Each calculation is stored in your browser session on the server. The CSV and PDF downloads include the saved rows, so export after you run all needed cases.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.