Model transport using electrons, holes, mobility, and geometry. See conductivity results clearly with exportable summaries. Built for precise learning, experiments, and material comparison tasks.
This form uses a 3-column layout on large screens, 2 columns on smaller screens, and 1 column on mobile devices.
The calculator combines electron and hole transport to estimate overall semiconductor conduction.
| Quantity | Formula | Meaning |
|---|---|---|
| Electron conductivity | σn = q · n · μn | Contribution from free electrons. |
| Hole conductivity | σp = q · p · μp | Contribution from holes. |
| Base conductivity | σbase = σn + σp | Total before temperature adjustment. |
| Temperature adjustment | σ = σbase · [1 + α(T − Tref)] | First-order correction around a reference temperature. |
| Resistivity | ρ = 1 / σ | Opposition to current flow. |
| Electric field | E = V / L | Field across the sample length. |
| Current density | J = σ · E | Current per unit area. |
| Resistance | R = ρL / A | Geometry-dependent resistance. |
This temperature relation is a simple engineering approximation. For deep semiconductor modeling, mobility and carrier density often vary nonlinearly with temperature.
This example uses typical silicon-style mobility values for demonstration.
| Input / Output | Value | Unit |
|---|---|---|
| Electron concentration | 2.5 × 1016 | cm^-3 |
| Hole concentration | 1.2 × 1015 | cm^-3 |
| Electron mobility | 1350 | cm²/V·s |
| Hole mobility | 480 | cm²/V·s |
| Applied voltage | 5 | V |
| Sample length | 2 | mm |
| Cross-sectional area | 0.8 | mm² |
| Calculated conductivity | 549.96 | S/m |
| Resistivity | 1.818 × 10-3 | Ω·m |
| Resistance | 4.546 | Ω |
It measures how easily electric charge moves through a semiconductor. Higher conductivity means the material supports current more readily under an applied electric field.
Both carriers can transport charge in semiconductors. Total conductivity is the sum of their separate contributions, weighted by carrier concentration, mobility, and charge magnitude.
Use it when you want a quick first-order adjustment around a known reference temperature. Set it to zero if your input mobility and carrier values already reflect operating temperature.
Resistance changes with sample length and cross-sectional area. A longer path increases opposition to current, while a wider area lowers resistance by giving carriers more space to flow.
Yes. Enter equal or similar electron and hole concentrations if your intrinsic model requires them. The calculator will combine both carrier terms automatically.
Carrier density can be entered in cm^-3 or m^-3. Mobility can be entered in cm²/V·s or m²/V·s. The calculator converts everything internally into SI units.
That is common in doped materials. If either electron or hole concentration is much larger, its conductivity contribution will dominate the total result and percentage share.
It is best for fast engineering estimates, teaching, and comparisons. Full device simulation usually requires recombination, band structure, field nonlinearity, and detailed temperature-dependent material models.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.