Model dry oxidation thickness using practical process inputs. Check growth constants, rates, and elapsed time. Plan fabrication steps with clearer oxide targets and confidence.
| Temperature (°C) | Time (min) | Initial Oxide (nm) | Pressure (atm) | Orientation | Final Thickness (nm) | End Rate (nm/min) |
|---|---|---|---|---|---|---|
| 900 | 30 | 5 | 1 | <100> | 9.5892 | 0.151385 |
| 1000 | 60 | 10 | 1 | <111> | 60.0817 | 0.672992 |
| 1100 | 90 | 20 | 1.2 | <100> | 155.1442 | 1.050347 |
This calculator uses the Deal-Grove oxidation model for dry silicon oxidation.
Dry oxide growth matters in semiconductor fabrication and process engineering. A dense silicon dioxide layer can improve interface quality, masking behavior, and electrical performance. Dry oxidation is slower than wet oxidation. It is still preferred when thin, cleaner films are needed. Engineers usually review temperature, time, pressure, crystal orientation, and initial oxide thickness. Each factor changes the final result.
Growth is faster near the beginning. Oxygen reaches the silicon surface more easily when the oxide is thin. As the film becomes thicker, oxygen must diffuse through more oxide before reacting. That slows the process. A simple linear estimate becomes weak in this region. The Deal-Grove model is useful because it combines interface reaction effects and diffusion effects in one equation.
Temperature strongly affects oxidation constants. Small temperature changes can shift thickness by a meaningful amount. Pressure also matters because it changes oxidant availability at the wafer surface. Wafer orientation can influence interface reaction behavior. Initial oxide thickness is also important. A wafer that already has oxide needs less added growth time than a bare wafer. This calculator captures those effects and reports final thickness, added oxide, time shift, and ending growth rate.
Final thickness shows the full oxide on the wafer. Added thickness shows only the growth gained during the step. End growth rate helps explain process efficiency near the finish. The linear constant A and parabolic constant B help compare recipes. These values can support screening studies, training work, and early process planning. They can also help explain why thin dry oxide grows quickly at first, then slows later.
This tool is best for estimation, comparison, and learning. It supports recipe review, furnace planning, and what-if checks. Real furnaces may still behave differently because of gas purity, ramp details, tube design, loading pattern, and local calibration. Use this result as a practical guide. Confirm any production setting with measured thickness data and equipment-specific process control.
It estimates dry silicon dioxide thickness, required oxidation time, growth constants, added oxide, and end growth rate from practical process inputs.
Dry oxidation forms denser oxide and uses oxygen diffusion through the growing film. That usually makes the process slower, especially for thicker layers.
Existing oxide changes the starting condition. The wafer is not beginning from bare silicon, so the required added time becomes lower for the same final target.
Yes. Orientation can change interface reaction behavior. This tool applies a practical factor to the linear rate part when the reference model is selected.
Yes. Choose the custom model and enter B and B/A values. That is useful when you have measured plant data or internal process fits.
Thickness is shown in nanometers, micrometers, and angstroms. Time is shown in minutes. Growth constants use µm²/hr and µm/hr.
It is best for engineering estimates, planning, and training. Final production settings should always be checked against measured furnace results.
As oxide gets thicker, oxygen must diffuse through more material before it reacts at silicon. That diffusion resistance lowers the growth rate over time.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.