Calculate final oxide thickness using advanced growth inputs. Convert units and inspect example process results. Export clean reports for fabrication studies and quick reviews.
| A (µm) | B (µm²/hr) | Time (hr) | Initial Thickness (µm) | Final Thickness (nm) | Added Thickness (nm) |
|---|---|---|---|---|---|
| 0.08 | 0.045 | 1.50 | 0.010 | 224.58 | 214.58 |
| 0.10 | 0.060 | 2.00 | 0.020 | 303.41 | 283.41 |
| 0.12 | 0.090 | 0.75 | 0.000 | 206.65 | 206.65 |
| 0.07 | 0.030 | 3.00 | 0.015 | 269.14 | 254.14 |
This calculator uses the Deal-Grove oxide growth model.
Virtual time: τ = (xi2 + A xi) / B
Final thickness: xf = (-A + √(A2 + 4B(t + τ))) / 2
Added thickness: Δx = xf - xi
Here, A is the linear rate constant, B is the parabolic rate constant, t is oxidation time, xi is initial oxide thickness, and xf is final oxide thickness.
Use consistent engineering units. In this page, A is entered in µm, B in µm²/hr, time converts to hours, and output converts to the selected thickness unit.
Silicon oxide thickness matters in many wafer processes. It affects insulation, capacitance, leakage, and device reliability. Engineers often need a quick estimate before running oxidation, reviewing experiments, or checking fabrication notes. This calculator helps convert oxidation inputs into a practical thickness result. It supports process planning, classroom work, and production documentation.
Thermal oxidation usually follows a linear and parabolic growth pattern. Thin layers grow in a reaction limited region. Thicker films shift toward a diffusion limited region. The Deal-Grove model combines both effects in one equation. That makes it useful for many engineering estimates. It is especially helpful when you already know the linear constant, parabolic constant, and oxidation time.
A good thickness estimate improves process control. It helps compare dry and wet oxidation studies. It also supports target matching for gate oxide, field oxide, masking layers, and dielectric stacks. When an engineer starts with an existing oxide layer, the virtual time method keeps the calculation consistent. That avoids underestimating the final layer.
This page also converts final thickness into nanometers, micrometers, or angstroms. That saves time during cross checks between lab notes, simulation reports, and fab records. Optional wafer area and oxide density inputs extend the result into volume and mass estimates. Those extra outputs are useful for reporting and material balance reviews.
The example table shows how different process constants change growth behavior. A larger parabolic constant usually increases thick oxide growth. A smaller linear constant can shift the crossover behavior. By testing several values, you can quickly compare oxidation scenarios. That helps with sensitivity analysis and early design reviews.
Because oxide thickness links directly to electrical behavior, even a small deviation can matter. Fast calculations help teams review recipes, estimate run times, and document assumptions before more detailed simulation or metrology work begins. That makes the tool useful across research, teaching, and manufacturing support today.
Use this calculator as an engineering estimate, not as a replacement for calibrated furnace data. Real oxidation depends on temperature, pressure, crystal orientation, gas chemistry, and equipment history. Still, a solid first estimate can save time and reduce iteration. For many planning tasks, a clean thickness model is exactly what engineers need.
It estimates final silicon oxide thickness from Deal-Grove growth inputs. It also reports added thickness, virtual time, and optional oxide volume and mass values.
A is entered in micrometers. B is entered in square micrometers per hour. Time can be seconds, minutes, or hours. Output can be nanometers, micrometers, or angstroms.
Initial oxide changes the virtual time term. That lets the model continue growth from an existing layer instead of assuming a bare silicon surface.
It is useful for many thermal oxidation estimates in engineering work. It helps during planning, process comparison, and early design review before detailed measurement data is available.
Yes, if your A and B values match the selected oxidation condition. The model depends on correct process constants for temperature, ambient chemistry, and equipment conditions.
Those outputs appear when wafer area is entered. They help with reporting, material estimates, and process documentation tied to the final or added oxide layer.
No. It is a fast engineering estimate. Measured thickness can differ because of real furnace behavior, pressure changes, crystal orientation, and process history.
Check A, B, time unit, and starting thickness first. Small unit mistakes can create large thickness errors. Also confirm that your process constants fit the actual oxidation recipe.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.