Model oxide thickness with practical inputs and useful defaults. Review dry or wet cases easily. Export results, formulas, examples, and assumptions for engineering work.
Preset constants are engineering estimates. Validate production work with measured furnace data.
| Case | Ambient | Orientation | Temperature (C) | Time (h) | Initial Oxide (nm) | Illustrative Final Oxide (nm) |
|---|---|---|---|---|---|---|
| 1 | Dry O2 | <100> | 900 | 2.0 | 0 | 61.8 |
| 2 | Wet H2O | <100> | 1000 | 1.5 | 10 | 458.2 |
| 3 | Dry O2 | <111> | 1100 | 3.0 | 20 | 381.6 |
The calculator uses the Deal-Grove growth relation:
x2 + Ax = B(t + τ)
Where x is final oxide thickness, B is the parabolic constant, and B/A is the linear constant.
The auxiliary terms are:
A = B / (B/A)
τ = (xi2 + Axi) / B
The solved thickness is:
x = (-A + sqrt(A2 + 4B(t + τ))) / 2
Preset values are scaled with temperature using a simple Arrhenius relation. The tool uses those presets for fast planning, not final process qualification.
A thermal oxide calculator helps engineers estimate silicon dioxide thickness during oxidation. It supports early process planning and quick design checks. This matters in semiconductor fabrication, MEMS work, and educational modeling. Oxide thickness changes with temperature, time, ambient type, and starting oxide. A reliable estimate reduces trial runs and improves documentation.
Thermal oxide acts as an insulator, surface passivation layer, and masking film. Device performance often depends on uniform and repeatable growth. Dry oxidation usually gives denser films and slower growth. Wet oxidation usually grows faster and is useful for thicker layers. Engineers compare both methods when balancing quality, throughput, and target thickness.
This calculator uses a Deal-Grove style model. It combines a linear term and a parabolic term. The linear region dominates thinner films. The parabolic region becomes more important as oxide grows. The model also accounts for initial oxide thickness. That makes the estimate more useful for sequential process steps.
Temperature has a strong effect because oxidation rates rise quickly with heat. Time directly increases growth opportunity. Ambient selection changes the rate constants. Crystal orientation can change the linear behavior. Initial oxide thickness shifts the starting condition. Advanced users can enter custom linear and parabolic constants when they already know process data.
The result section reports final oxide thickness, added growth, linear constant, parabolic constant, and estimated growth regime. These values are best used for screening, comparison, and reporting. They do not replace furnace qualification or metrology. Always validate production settings with measured wafers, equipment history, and process control data.
This page also includes CSV export, PDF export, a sample data table, formulas, and step guidance. Those extras make the calculator easier to share with students, technicians, and reviewers. For best results, use consistent units and realistic constants. Good assumptions produce better oxide thickness estimates and better engineering decisions.
Because process windows are tight, quick comparison tools save time during reviews. They also explain tradeoffs between faster growth, wafer cycle time, and film quality without lengthy manual calculations and reviews.
It estimates final silicon dioxide thickness after thermal oxidation. It also reports added growth, rate constants, and the likely growth regime for the selected process inputs.
Use it for planning, comparison, and education. Production settings still need measured wafer data, qualified recipes, and equipment-specific validation before release.
Wet oxidation typically has stronger transport and reaction rates for thicker oxide growth. That usually increases the parabolic growth constant compared with dry oxidation.
Crystal orientation can change the surface reaction behavior. That mainly affects the linear part of the oxidation model and can shift thin-oxide predictions.
Input oxide thickness uses nanometers. The model converts thickness to micrometers internally because the rate constants are expressed in micrometer-based units.
Yes. Choose custom constants and enter B and B/A directly. That is useful when you have plant data, lab fits, or textbook values to match.
The model uses an effective time shift. A nonzero starting oxide means some growth has already occurred, so the next step begins from a different condition.
Linear growth is more important for thinner oxide films and early time behavior. Parabolic growth becomes more important as the film thickens and diffusion resistance increases.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.