Compare crystal parameters in seconds for epitaxy planning. Adjust for thermal strain and supercell ratios. Save outputs as CSV or PDF with units today.
Enter film and substrate lattice parameters. Optional tools include thermal expansion, cubic plane spacing, and m:n domain matching for supercell alignment.
Example lattice constants for quick testing. Always verify values for your specific temperature, alloy fraction, and crystal polytype.
| Material | Crystal type (typical) | Lattice parameter (Å) | Common substrate use |
|---|---|---|---|
| Si | Cubic | 5.431 | Microelectronics |
| Ge | Cubic | 5.658 | SiGe buffers |
| GaAs | Cubic | 5.653 | III–V epitaxy |
| InP | Cubic | 5.869 | InGaAs devices |
| GaN | Hexagonal (a) | 3.189 | LED structures |
| AlN | Hexagonal (a) | 3.112 | Buffers and templates |
Lattice mismatch compares repeat lengths of a film and its substrate. In epitaxial growth, mismatch sets the elastic strain needed for registry and influences dislocation formation. It is commonly reported near room temperature for fast screening. The calculator reports mismatch in percent and ppm for practical decisions.
Use lattice parameters for the same phase, composition, and reference conditions. Angstroms are common for crystal constants, while nanometers appear in device literature. Because mismatch is a ratio, unit choice does not change results, but consistent units prevent entry mistakes and confusing documentation.
Some interfaces align over multiple unit cells. Domain matching evaluates a supercell relationship, m·afilm versus n·asub. This helps when a near-integer ratio reduces effective mismatch and can improve interface coherence for rotated or reconstructed domains. It is also useful for matching in-plane lattice vectors.
For growth on a specific plane, the relevant spacing may be dhkl rather than the bulk lattice constant. For cubic materials, dhkl=a/√(h²+k²+l²). Enabling the plane option compares oriented repeat distances using the same indices for both materials.
Films are deposited hot and then cooled. If film and substrate thermal expansion differ, additional mismatch develops on cooldown. The thermal option uses a(T)=a0(1+αΔT) so you can estimate temperature-driven strain shifts for a chosen ΔT and evaluate post-growth stress risk.
Positive mismatch means the film is effectively larger than the substrate, typically giving compressive strain if clamped in-plane. Negative mismatch suggests tensile strain. Sign matters for band shifts, piezoelectric response, cracking risk, and wafer bow, especially for thick or brittle layers.
As a rule of thumb, |mismatch| below about 0.1% is excellent, 0.1–0.5% is often manageable, 0.5–1% needs careful thickness control, and above 1% usually needs buffers, grading, or different substrates. Outcomes also depend on critical thickness and relaxation kinetics. The ppm output helps compare close candidates.
Record your inputs, options, and assumptions. Note whether values are room-temperature or growth-temperature, whether plane spacing was used, and any domain ratio. CSV supports lab notebooks and spreadsheets, while the PDF snapshot supports quick sharing in design reviews. Include references for constants and measurement methods where possible.
A negative value means the film’s effective length is smaller than the substrate’s. If the film locks to the substrate in-plane, it is typically under tensile strain at that interface.
Yes. Enter the alloy lattice parameter you expect at the chosen composition and temperature. If you estimate with Vegard’s law or literature fits, note the method in your report.
The base mismatch works for any comparable in-plane length you enter. The dhkl option is cubic-only. For hexagonal systems, use the appropriate a-plane spacing value directly.
PPM is convenient when mismatch is very small. Since 1% equals 10,000 ppm, ppm highlights fine differences that may matter for precision lattice matching and strain budgets.
Use it when the interface repeats over multiple unit cells or a coincidence lattice is expected. Try small integers first and check whether the ratio reflects a physically plausible epitaxial relationship.
Use thermal expansion coefficients from reliable material data and set ΔT as growth temperature minus the reference temperature of your lattice constants. If data varies with temperature, use an average over your range.
No. It reduces misfit strain, but defects can still arise from impurities, thermal stress, surface steps, polarity, and growth kinetics. Use mismatch as one key screening metric, not the only one.
Important Note: All the Calculators listed in this site are for educational purpose only and we do not guarentee the accuracy of results. Please do consult with other sources as well.